Power modules based on Wide Band Gap (WBG) materials enhance
efficiency, but also introduce oscillations to switching cycles due to
the higher di/dt. While the transistors are robust and can handle the
oscillations, the radiated and conducted noise becomes a nuisance
for components or circuits downstream. This noise may lead to erroneous
faults, forcing designers to significantly derate the transistors,
thereby reducing usable ratings of the power module.
AgileSwitch recognized this opportunity and has since extensively
studied and implemented gate driver techniques specifically for Silicon
Carbide Power Modules.
Overcoming Challenges in Driving Silicon Carbide Power Modules
OPTIMIZED FOR SiC